Others

Electrochemical etching system

• For electrochemical etching of silicon wafers 
• Computer programmable power source

Tube furnace, Nabertherm R 50/500/12

• Max.  temperature 1200 °C 
• For thermal hydrocarbonization, carbonization, and oxidation of (porous) silicon 
• Installed gases: acetylene and nitrogen

Tube furnace, Linn High Term FRHT-35/500/1100

• Max. temperature 1150 °C 
• Temperature controller: G400
• Installed gases: acetylene and nitrogen

Centrifuges (small Eppendorf (1,5 & 2 ml) and 50 ml tubes)

Basic lab equipment

• Planetary ball mill
• Sieving system
• Scales (Readabilities 0.0000g and 0.0001mg)